Fundamentals of Modern VLSI Devices [Yuan Taur, Tak H. Ning] on . *FREE* shipping on qualifying offers. This book examines in detail the basic. Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. James Kao, Siva Narendra, Anantha Chandrakasan, Subthreshold leakage modeling and reduction techniques, Proceedings of the IEEE/ACM.
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Fundamentals of Modern VLSI Devices
Lcheng6 marked it as to-read Jan 18, Want to Read Currently Reading Read. The book contains many exercises, and can be used as a textbook for senior undergraduate or first-year graduate courses on microelectronics or VLSI devices.
Book Falcons rated it liked it Feb 18, Learn more about Amazon Prime.
Each chapter concludes with real-life exercises that actually extend the depth of analysis, getting the reader directly involved. Top Reviews Most recent Top Reviews. Watson Research Center where he won numerous invention and achievement awards. Description This book examines in detail the basic properties and design, including chip integration, of CMOS and bipolar VLSI devices and discusses the various factors that affect their performance.
If you are a seller for this product, would you like to suggest updates through seller support? The bipolar-transitor part takes the reader all the way from the classical junction transistor to the modern polysilicon-emitter, SiGe-base variety.
Xiuqi added it Oct 26, Sayan Ray marked it as to-read Mar 28, Try the Kindle edition and modedn these great reading features: They also discuss in detail the scaling, and takr limits to the scaling, of CMOS and bipolar devices. Benjamin Gojman added it May 21, Lists with This Book. But what really yyuan me is that the binding quality of hardcover version is too bad. Suman Sarkar marked it as to-read Sep 24, Amazon Rapids Fun stories for kids on the go. Review “For the past several funxamentals, I’ve taught from Taur and Ning’s book because it’s best at connecting advanced device physics to real world device, circuit, and system technology.
The second edition updates each chapter, adds new chapters on memory and SOI, doubles the number of appendices, and contains all new homework problems. Chuck Yu marked it as to-read Oct 02, English Choose a language for shopping. If you seek to understand devices from a physical point of view this book just fails to live up to it.
Fundamentals of Modern VLSI Devices – Yuan Taur, Tak H. Ning – Google Books
Two new chapters on memory and silicon-on-insulator devices have been included along with nine additional appendixes. Bahram Ganjipour marked it as to-read Apr 04, I learn a lot after I finish the first round of read of this book.
There are no discussion topics on this book yet. I thought to increase the rating to 5 star. It will also be a valuable reference volume for practicing engineers involved in research and development in the electronics industry.
Discover Prime Book Box for Kids. Mohammed Beig rated it liked it Feb 22, What other items do customers buy after viewing this item? I am afraid that my book will fall apart after frequent of use. Mohamedmagdy marked it as to-read Apr 11, So the total is 3 or 3. Amazon Fundwmentals Cloud storage from Amazon.
ComiXology Thousands of Digital Comics. The Best Books of Refresh and try again. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities mpdern worldwide. Carol Andserson rated it it was amazing Feb 19, Goodreads helps you keep track of books you want to read. No trivia or quizzes yet. The authors begin with a thorough review of the relevant aspects of semiconductor physics, and proceed to a description I have no background in device design but I am interested in and have some knowledge of the physics in device.
I rate 2 star for its binding quality. Now the second edition comes with timely updates and two new chapters, which continue the tradition of emphasizing the design aspects of modern VLSI devices.
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