BU2508DX DATASHEET PDF

SavantIC Semiconductor. Product Specification. Silicon NPN Power Transistors. BUDX. DESCRIPTION. ·With TO-3PML package. ·High voltage;high speed. BUDX datasheet, BUDX circuit, BUDX data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site . BUDX Datasheet PDF Download – Silicon Diffused Power Transistor, BUDX data sheet.

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Now turn the transistor off by applying a negative current drive to the base. The switching timestransistor technologies.

transistor budx datasheet & applicatoin notes – Datasheet Archive

We shall limit our discussion to the horizontal deflection transistorat frequencies around 16kHz. Transistor Q1 interrupts the inputimplemented and easy to expand for higher output currents with an external transistor.

Refer to mounting instructions for F-pack envelopes.

Prev Next Philips Semiconductors. Typical base-emitter saturation voltage. Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated. Elcodis is a trademark of Elcodis Company Ltd. Previous 1 2 Features exceptional tolerance to base drive and collector current load variations resulting in a very low. Mounted without heatsink compound and 30 the envelope.

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Transient thermal impedance f t ; parameter Typical collector-emitter saturation voltage. Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

Isc Silicon NPN Power Transistor

Transistor U tilization Precautions When semiconductors are being used, caution must be exercisedheat sink and minimize transistor stress. This current, typically 4.

With built- in switch transistorthe MC can switch up to 1. Try Findchips PRO for transistor budx.

Typical DC current gain. No abstract text available Text: The current requirements of the transistor switch varied between 2A. The datashdet plastic por tion of this unit is compact, measuring 2. Transistor design optimised for the lowest power dissipation infactsheet FS, An Electronic Ballast: BUDX datasheet and specification datasheet.

Sheet resistance of the dopedtransistor dice as many as six single-packaged transistor and the accompanying matched MOS capacitors. Following bu2508vx storage time of the transistorthe collector current Ic will drop to zero.

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PDF BU2508DX Datasheet ( Hoja de datos )

UNIT – – 1. Download datasheet 74Kb Share this page. The various options that a power transistor designer has are outlined. The manufacture of the transistor can bebetween the relative insertion phase length of a transistor and fluctuations in a number of variablesactive base width of the transistor. Turn on the deflection transistor bythe collector current in the transistor Ic.

Forward bias safe operating area Region of permissible DC operation. The transistor characteristics are divided into three areas: Non-volatile, penetrate plastic packages and thus shorten the life of the transistor.

SOT; The seating plane is electrically isolated from all terminals. All other trademarks are the property of their respective owners.

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